کتابخانه

Features

• Covers research on epitaxial graphene on silicon carbide for use in micro- and nanoelectronics
• Is illustrated throughout with excellent figures and references to accompany each section
• Is a comprehensive book from multiple authors that can be adopted for introductory undergraduate courses in nanoscience and nanotechnology, materials science and engineering, physics, and chemistry
• Contains both theoretical and experimental results, as well as relevant examples of applications of epitaxial graphene

Summary

This is the first book dedicated exclusively to epitaxial graphene on silicon carbide (EG-SiC). It comprehensively addresses all fundamental aspects relevant for the study and technology development of EG materials and their applications, using quantum Hall effect studies and probe techniques such as scanning tunneling microscopy and atomic resolution imaging based on transmission electron microscopy. It presents the state of the art of the synthesis of EG-SiC and profusely explains it as a function of SiC substrate characteristics such as polytype, polarity, and wafer cut as well as the in situ and ex situ conditioning techniques, including H₂ pre-deposition annealing and chemical mechanical polishing. It also describes growth studies, including the most popular characterization techniques, such as ultrahigh-vacuum, partial-pressure, or graphite-cap sublimation techniques, for high-quality controlled deposition.

The book includes relevant examples on synthesis and characterization techniques as well as device fabrication processing and performance and complements them with theoretical modeling and simulation studies, which are helpful in the fundamental comprehension of EG-SiC substrates and their potential use in electronic applications. It addresses the fundamental aspects of EG-SiC using quantum Hall effect studies as well as probe techniques, such as scanning tunneling microscopy or atomic resolution imaging based on transmission electron microscopy. It comprises chapters that present reviews and vision on the current state of the art of experts in physics, electronic engineering, materials science, and nanotechnology from Europe and Asia.

Table of Contents

Epitaxial Graphene on SiC Substrate: A View from a Specialist of SiC Growth and Material Science

Gabriel Ferro

Growth Mechanism, Structures, and the Properties of Graphene on SiC {0001} Surfaces: Theoretical and Experimental Studies at the Atomic Scale

Wataru Norimatsu

Fabrication of Graphene by Thermal Decomposition of SiC

G. Reza Yazdi, Tihomir Iakimova, and Rositza Yakimova

Nanoscale Electrical and Structural Properties of Epitaxial Graphene Interface with SiC(0001)

F. Giannazzo, I. Deretzis, A. La Magna, G. Nicotra, C. Spinella, F. Roccaforte, and R. Yakimova

Theory of Graphene Growth on SiC Substrate

Hiroyuki Kageshima

Epitaxial Graphene on SiC from the Viewpoint of Planar Technology

Gemma Rius

The Beauty of Quantum Transport in Graphene

B. Jouault, F. Schopfer, and W. Poirier

Raman Spectroscopy of Graphene on Silicon Carbide

Ana Ballestar

Graphene on SiC: Chemico-Physical Characterization

Micaela Castellino and Jordi Fraxedas