کتابخانه دیجیتال فوركيا

کتابخانه دیجیتال فوركيا

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CMOS Past, Present and Future


CMOS Past, Present and Future

Title: CMOS Past, Present and Future | Author(s): Luo, Jun; Radamson, Henry; Simoen, Eddy; Zhao, Chao | Publisher: Elsevier | Year: 2018 | Language: English | Pages : 353 | ISBN: 9780081021408, 0081021402 | Size: 17 MB | Extension: pdf

 

Description

CMOS Past, Present and Future provides insight from the basics, to the state-of-the-art of CMOS processing and electrical characterization, including the integration of Group IV semiconductors-based photonics. The book goes into the pitfalls and opportunities associated with the use of hetero-epitaxy on silicon with strain engineering and the integration of photonics and high-mobility channels on a silicon platform. It begins with the basic definitions and equations, but extends to present technologies and challenges, creating a roadmap on the origins of the technology and its evolution to the present, along with a vision for future trends.

The book examines the challenges and opportunities that materials beyond silicon provide, including a close look at high-k materials and metal gate, strain engineering, channel material and mobility, and contacts. The books key approach is on characterizations, device processing and electrical measurements.

Key Features

  • Addresses challenges and opportunities for the use of CMOS
  • Covers the latest methods of strain engineering, materials integration to increase mobility, nano-scaled transistor processing, and integration of CMOS with photonic components
  • Provides a look at the evolution of CMOS technology, including the origins of the technology, current status and future possibilities

Readership

Materials scientist researchers and electronic engineers in research and design

 

 

Table of contents :
Intro
Title page
Table of Contents
Copyright
Contributors
Preface
Acknowledgments
1: Basics of metal-oxide-semiconductor field-effect transistor (MOSFET)
Abstract
1.1 Introduction
1.2 Basics of MOSFETs operation
1.3 Figures of merit of MOSFETs
1.4 Evolution of the MOSFET structure
2: Scaling and evolution of device architecture
Abstract
2.1 Introduction
2.2 Dimension and architectural scaling
2.3 Lithography for downscaling
2.4 Electron-beam lithography (EBL)
2.5 Strain engineering
2.6 Impact of scaling
2.7 Beyond CMOS and beyond Si CMOS
3: Strain engineering
Abstract. 7.6 Summary8: Advanced interconnect technology and reliability
Abstract
8.1 Introduction
8.2 Copper interconnect integration
8.3 Low-k dielectric characteristics and classification
8.4 Copper interaction with silicon and dielectrics
8.5 Metal diffusion barriers
8.6 Reliability of copper metallization
8.7 Reliability of advanced intermetal dielectrics
8.8 Reliability statistics and failure models
8.9 The future of interconnect: beyond Cu and low-k
8.10 Summary
Final words
Acronyms
Index.


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