Title: CMOS Past, Present and Future | Author(s): Luo, Jun; Radamson, Henry; Simoen, Eddy; Zhao, Chao | Publisher: Elsevier | Year: 2018 | Language: English | Pages : 353 | ISBN: 9780081021408, 0081021402 | Size: 17 MB | Extension: pdf
CMOS Past, Present and Future provides insight from the basics, to the state-of-the-art of CMOS processing and electrical characterization, including the integration of Group IV semiconductors-based photonics. The book goes into the pitfalls and opportunities associated with the use of hetero-epitaxy on silicon with strain engineering and the integration of photonics and high-mobility channels on a silicon platform. It begins with the basic definitions and equations, but extends to present technologies and challenges, creating a roadmap on the origins of the technology and its evolution to the present, along with a vision for future trends.
The book examines the challenges and opportunities that materials beyond silicon provide, including a close look at high-k materials and metal gate, strain engineering, channel material and mobility, and contacts. The books key approach is on characterizations, device processing and electrical measurements.
Materials scientist researchers and electronic engineers in research and design
Table of contents :
Intro
Title page
Table of Contents
Copyright
Contributors
Preface
Acknowledgments
1: Basics of metal-oxide-semiconductor field-effect transistor (MOSFET)
Abstract
1.1 Introduction
1.2 Basics of MOSFETs operation
1.3 Figures of merit of MOSFETs
1.4 Evolution of the MOSFET structure
2: Scaling and evolution of device architecture
Abstract
2.1 Introduction
2.2 Dimension and architectural scaling
2.3 Lithography for downscaling
2.4 Electron-beam lithography (EBL)
2.5 Strain engineering
2.6 Impact of scaling
2.7 Beyond CMOS and beyond Si CMOS
3: Strain engineering
Abstract. 7.6 Summary8: Advanced interconnect technology and reliability
Abstract
8.1 Introduction
8.2 Copper interconnect integration
8.3 Low-k dielectric characteristics and classification
8.4 Copper interaction with silicon and dielectrics
8.5 Metal diffusion barriers
8.6 Reliability of copper metallization
8.7 Reliability of advanced intermetal dielectrics
8.8 Reliability statistics and failure models
8.9 The future of interconnect: beyond Cu and low-k
8.10 Summary
Final words
Acronyms
Index.
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